MMBT6427LT3G
TRANS NPN DARL 40V 0.5A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MMBT6427LT3G is an NPN Darlington bipolar junction transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 40 V and a maximum continuous collector current (Ic) of 500 mA. With a high minimum DC current gain (hFE) of 20000 at 100mA and 5V, it is suitable for applications requiring significant current amplification. The transistor has a maximum power dissipation of 225 mW and a collector-emitter saturation voltage (Vce(sat)) of 1.5V at 500µA collector current. Packaged in a SOT-23-3 (TO-236) surface mount configuration, this device is commonly utilized in consumer electronics and industrial control systems where efficient switching and amplification are critical.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Darlington |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 500µA, 500mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20000 @ 100mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 225 mW |
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