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MMBT6427LT3

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MMBT6427LT3

TRANS NPN DARL 40V 0.5A SOT23-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

The onsemi MMBT6427LT3 is an NPN Darlington bipolar junction transistor (BJT) designed for surface mount applications. This component features a maximum collector-emitter breakdown voltage of 40 V and a continuous collector current capability of 500 mA. It exhibits a high minimum DC current gain (hFE) of 20000 at 100mA and 5V, with a saturation voltage (Vce Sat) of 1.5V at 500µA and 500mA. The device is supplied in a SOT-23-3 (TO-236) package, delivered on tape and reel. With a maximum power dissipation of 225 mW, this transistor is suitable for use in various electronic systems, including power control and switching applications within the consumer electronics and industrial automation sectors.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypeNPN - Darlington
Operating Temperature-
Vce Saturation (Max) @ Ib, Ic1.5V @ 500µA, 500mA
Current - Collector Cutoff (Max)1µA
DC Current Gain (hFE) (Min) @ Ic, Vce20000 @ 100mA, 5V
Frequency - Transition-
Supplier Device PackageSOT-23-3 (TO-236)
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)40 V
Power - Max225 mW

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