MMBT5550
TRANS NPN 140V 0.6A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MMBT5550 is an NPN bipolar junction transistor (BJT) designed for surface mount applications. This component offers a collector-emitter breakdown voltage of 140V and a maximum continuous collector current of 600mA. It features a transition frequency of 50MHz and a maximum power dissipation of 350mW. The device exhibits a minimum DC current gain (hFE) of 60 at 10mA collector current and 5V collector-emitter voltage. Saturation voltage is specified at 250mV maximum for a 5mA base current and 50mA collector current. Packaged in a SOT-23-3 (TO-236-3, SC-59), it is supplied on tape and reel. This transistor is suitable for use in general-purpose switching and amplification circuits across various industrial and consumer electronics applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA, 5V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 140 V |
| Power - Max | 350 mW |
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