MMBT5401LT3
TRANS PNP 150V 0.5A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MMBT5401LT3 is a PNP bipolar junction transistor (BJT) designed for surface mount applications. This component offers a 150V collector-emitter breakdown voltage and a continuous collector current capability of up to 500mA. With a minimum DC current gain (hFE) of 60 at 10mA and 5V, it exhibits a transition frequency of 300MHz. The transistor has a maximum power dissipation of 300mW and operates within a temperature range of -55°C to 150°C. Housed in a SOT-23-3 (TO-236) package, this device is supplied in tape and reel. Its electrical characteristics make it suitable for general-purpose amplification and switching in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA, 5V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 300 mW |
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