MMBT5210
TRANS NPN 50V 0.1A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
Quality Control: Learn More
onsemi MMBT5210 is an NPN bipolar junction transistor designed for surface mount applications within a SOT-23-3 package. This component offers a collector-emitter breakdown voltage of 50V and a continuous collector current capability of 100mA. Key specifications include a transition frequency of 30MHz, a maximum power dissipation of 350mW, and a low collector cutoff current of 50nA (ICBO). The DC current gain (hFE) is a minimum of 200 at 100µA and 5V, with a Vce(sat) of 700mV at 1mA collector current and 10mA base current. Operating temperature range is from -55°C to 150°C. This transistor is suitable for use in various electronic circuits across industrial and consumer electronics sectors. It is supplied in a Tape & Reel (TR) package.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100µA, 5V |
| Frequency - Transition | 30MHz |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 350 mW |
Request a Quote
Clients Also Buy
MJE371G
TRANS PNP 40V 4A TO126
MPSA92ZL1G
TRANS PNP 300V 0.5A TO92
MMBTA06_D87Z
TRANS NPN 80V 0.5A SOT23-3
