MMBT5089LT1
TRANS NPN 25V 50MA SOT23Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MMBT5089LT1 is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This device features a 25V collector-emitter breakdown voltage and a maximum collector current of 50mA, with a power dissipation rating of 225mW. The minimum DC current gain (hFE) is 450 at 1mA collector current and 5V collector-emitter voltage. Its transition frequency is 50MHz, making it suitable for moderate frequency circuits. The MMBT5089LT1 is housed in a SOT-23-3 (TO-236) surface-mount package, commonly found in consumer electronics, industrial control systems, and telecommunications equipment. The device operates within a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 450 @ 1mA, 5V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Power - Max | 225 mW |
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