MMBT5087
TRANS PNP 50V 0.1A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MMBT5087 is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This surface-mount component, housed in a SOT-23-3 package, offers a collector-emitter breakdown voltage of 50 V and a maximum continuous collector current of 100 mA. It features a transition frequency of 40 MHz and a maximum power dissipation of 350 mW. The DC current gain (hFE) is a minimum of 250 at 100 µA collector current and 5 V collector-emitter voltage. Collector cutoff current is specified at a maximum of 10 nA. The device exhibits a Vce(sat) of 300 mV maximum at 1 mA base current and 10 mA collector current. Operating temperature range is from -55°C to 150°C. This transistor finds application in consumer electronics, industrial control systems, and various signal processing circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 100µA, 5V |
| Frequency - Transition | 40MHz |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 350 mW |
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