MMBT4356
TRANS PNP 80V 0.8A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MMBT4356 is a PNP bipolar junction transistor designed for general-purpose switching and amplification applications. This device features a collector-emitter breakdown voltage of 80V and a continuous collector current capability of 800mA. With a maximum power dissipation of 350mW, the MMBT4356 is packaged in a compact SOT-23-3 surface-mount configuration, facilitating efficient board space utilization. Key electrical characteristics include a minimum DC current gain (hFE) of 50 at 10mA collector current and 10V collector-emitter voltage, and a collector-emitter saturation voltage of 500mV at 50mA collector current and 50mA base current. The transistor exhibits a low collector cutoff current of 50nA. This component is commonly found in consumer electronics, industrial control systems, and telecommunications equipment. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 350 mW |
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