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MMBT4355

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MMBT4355

TRANS PNP 60V 0.8A SOT23-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

The onsemi MMBT4355 is a PNP bipolar junction transistor designed for surface mount applications. This component features a Vce breakdown voltage of 60V and a maximum collector current (Ic) of 800mA. The transistor exhibits a minimum DC current gain (hFE) of 100 at 10mA collector current and 10V Vce. Its maximum power dissipation is rated at 350mW. The device is supplied in a SOT-23-3 (TO-236-3, SC-59) package, delivered on tape and reel. Operating temperature ranges from -55°C to 150°C. This transistor is suitable for use in general-purpose amplification and switching applications across various electronic industries.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 100mA, 1A
Current - Collector Cutoff (Max)50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA, 10V
Frequency - Transition-
Supplier Device PackageSOT-23-3
Current - Collector (Ic) (Max)800 mA
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max350 mW

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