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MMBT3702

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MMBT3702

TRANS PNP 25V 0.8A SOT23-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi MMBT3702 is a PNP bipolar junction transistor designed for general-purpose switching and amplification applications. This device features a 25V collector-emitter breakdown voltage and a maximum continuous collector current of 800mA. The transistor offers a minimum DC current gain (hFE) of 60 at 50mA and 5V, with a transition frequency of 100MHz. Its maximum power dissipation is 350mW, and it operates within an ambient temperature range of -55°C to 150°C. The MMBT3702 is housed in a SOT-23-3 surface-mount package, making it suitable for compact electronic designs. Typical saturation voltage (Vce(sat)) is 250mV at 5mA base current and 50mA collector current. This component finds use in various industries including consumer electronics and industrial automation.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic250mV @ 5mA, 50mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 50mA, 5V
Frequency - Transition100MHz
Supplier Device PackageSOT-23-3
Current - Collector (Ic) (Max)800 mA
Voltage - Collector Emitter Breakdown (Max)25 V
Power - Max350 mW

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