MMBT2369LT3G
TRANS NPN 15V 0.2A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MMBT2369LT3G is a bipolar junction transistor (BJT) featuring an NPN configuration. This device offers a collector-emitter breakdown voltage of 15 V and a continuous collector current capability of up to 200 mA. Key parameters include a maximum power dissipation of 225 mW and a saturation voltage ($V_{CE(sat)}$) of 250 mV at 1 mA base current and 10 mA collector current. The minimum DC current gain ($h_{FE}$) is 40 at 10 mA collector current and 350 mV collector-emitter voltage. The transistor is housed in a SOT-23-3 (TO-236) surface-mount package, suitable for a broad operating temperature range of -55°C to 150°C. This component finds application in various electronic circuits across industries such as industrial automation, consumer electronics, and telecommunications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 400nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA, 350mV |
| Frequency - Transition | - |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
| Power - Max | 225 mW |
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