MMBT2369LT1G
TRANS NPN 15V 0.2A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MMBT2369LT1G is an NPN bipolar junction transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 15V and a continuous collector current capability of 200mA, with a maximum power dissipation of 225mW. The device exhibits a minimum DC current gain (hFE) of 40 at 10mA collector current and 350mV collector-emitter voltage. Collector cutoff current is rated at a maximum of 400nA. The saturation voltage (Vce(sat)) is a maximum of 250mV at 1mA base current and 10mA collector current. Packaged in a SOT-23-3 (TO-236) surface mount case, the operating temperature range is -55°C to 150°C. This transistor is commonly utilized in industrial and consumer electronics for general-purpose switching and amplification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 400nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA, 350mV |
| Frequency - Transition | - |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
| Power - Max | 225 mW |
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