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MMBT2369A

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MMBT2369A

TRANS NPN 15V 0.2A SOT23-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

onsemi NPN Bipolar Junction Transistor, part number MMBT2369A. This surface mount device, packaged in a SOT-23-3 (TO-236-3, SC-59) configuration, offers a collector current of 200 mA and a collector-emitter breakdown voltage of 15 V. The MMBT2369A exhibits a minimum DC current gain (hFE) of 40 at 10 mA collector current and 1 V collector-emitter voltage. With a maximum power dissipation of 225 mW and an operating temperature range of -55°C to 150°C, this transistor is suitable for applications in consumer electronics and general-purpose switching circuits. The device features a collector cutoff current (ICBO) of 400 nA and a Vce(sat) of 500 mV at 10 mA base current and 100 mA collector current. Available in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 10mA, 100mA
Current - Collector Cutoff (Max)400nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 10mA, 1V
Frequency - Transition-
Supplier Device PackageSOT-23-3
Current - Collector (Ic) (Max)200 mA
Voltage - Collector Emitter Breakdown (Max)15 V
Power - Max225 mW

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