MMBT2369A
TRANS NPN 15V 0.2A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi NPN Bipolar Junction Transistor, part number MMBT2369A. This surface mount device, packaged in a SOT-23-3 (TO-236-3, SC-59) configuration, offers a collector current of 200 mA and a collector-emitter breakdown voltage of 15 V. The MMBT2369A exhibits a minimum DC current gain (hFE) of 40 at 10 mA collector current and 1 V collector-emitter voltage. With a maximum power dissipation of 225 mW and an operating temperature range of -55°C to 150°C, this transistor is suitable for applications in consumer electronics and general-purpose switching circuits. The device features a collector cutoff current (ICBO) of 400 nA and a Vce(sat) of 500 mV at 10 mA base current and 100 mA collector current. Available in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 400nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
| Power - Max | 225 mW |