MMBT2222LT3G
TRANS NPN 30V 0.6A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MMBT2222LT3G is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This device features a 30V collector-emitter breakdown voltage and a maximum continuous collector current of 600mA. The transistor exhibits a minimum DC current gain (hFE) of 100 at 150mA and 10V, with a transition frequency of 250MHz. Its low saturation voltage of 1.6V at 50mA and 500mA simplifies circuit design. The MMBT2222LT3G is housed in a SOT-23-3 (TO-236-3) surface-mount package, suitable for automated assembly. It operates within an extended temperature range of -55°C to 150°C. This component is commonly utilized in consumer electronics, industrial control systems, and various signal processing circuits. The device is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 300 mW |
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