MMBT2222ALT1
TRANS NPN 40V 600MA SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MMBT2222ALT1 is a bipolar junction transistor (BJT) featuring an NPN configuration. This device is rated for a collector-emitter breakdown voltage of 40V and a continuous collector current of up to 600mA. With a transition frequency of 300MHz and a maximum power dissipation of 225mW, it is suitable for general-purpose amplification and switching applications. The DC current gain (hFE) is a minimum of 100 at 150mA and 10V. The transistor type is NPN, and the saturation voltage (Vce) at 50mA base current and 500mA collector current is a maximum of 1V. It is supplied in the SOT-23-3 (TO-236) surface mount package, delivered in cut tape. Typical industries utilizing this component include consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 225 mW |
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