MMBT200A
TRANS PNP 45V 0.5A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MMBT200A, a PNP bipolar junction transistor, offers a 45V collector-emitter breakdown voltage and a maximum collector current of 500mA. This device features a transition frequency of 250MHz and a power dissipation of 350mW. The DC current gain (hFE) is specified at a minimum of 300 at 10mA collector current and 1V collector-emitter voltage. Saturation voltage (Vce Sat) is a maximum of 400mV at 20mA base current and 200mA collector current. The collector cutoff current is a maximum of 50nA. Designed for surface mounting, it is housed in a SOT-23-3 package. The operating temperature range is -55°C to 150°C. This component is frequently utilized in general-purpose amplification and switching applications across various industrial electronics sectors. The MMBT200A is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 20mA, 200mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 10mA, 1V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 350 mW |
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