MMBT200
TRANS PNP 45V 0.5A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MMBT200 is a PNP bipolar junction transistor (BJT) designed for surface mount applications. This component features a 45V collector-emitter breakdown voltage and a maximum collector current of 500 mA. With a transition frequency of 250 MHz and a power dissipation of 350 mW, it is suitable for general-purpose switching and amplification tasks. The device exhibits a minimum DC current gain (hFE) of 100 at 150 mA and 5V, with a Vce(sat) of 400mV at 20mA/200mA. Operating across a temperature range of -55°C to 150°C, the MMBT200 is housed in a compact SOT-23-3 package, often used in consumer electronics and industrial control systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 20mA, 200mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 5V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 350 mW |
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