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MJW21192G

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MJW21192G

TRANS NPN 150V 8A TO247-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi MJW21192G is a high-performance NPN bipolar junction transistor designed for demanding power applications. This device features a 150V collector-emitter breakdown voltage and a continuous collector current capability of 8A, with a maximum power dissipation of 125W. It offers a minimum DC current gain (hFE) of 15 at 4A and 2V, and a transition frequency of 4MHz. The MJW21192G is housed in a TO-247-3 package for efficient heat dissipation via a through-hole mounting configuration. Its saturation voltage (Vce) at 8A collector current and 1.6A base current is a maximum of 2V. This component is suitable for use in power supply circuits, audio amplifiers, and motor control applications. The operating temperature range is from -65°C to 150°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic2V @ 1.6A, 8A
Current - Collector Cutoff (Max)10µA
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 4A, 2V
Frequency - Transition4MHz
Supplier Device PackageTO-247-3
Current - Collector (Ic) (Max)8 A
Voltage - Collector Emitter Breakdown (Max)150 V
Power - Max125 W

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