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MJW21192

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MJW21192

TRANS NPN 150V 8A TO247-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi MJW21192 is a high-power NPN bipolar junction transistor designed for demanding applications. This device features a maximum collector-emitter breakdown voltage of 150V and a continuous collector current capability of 8A. With a power dissipation rating of 125W and a transition frequency of 4MHz, it is suitable for power switching and amplification circuits. The DC current gain (hFE) is a minimum of 15 at 4A collector current and 2V collector-emitter voltage. Saturation voltage (Vce Sat) is a maximum of 2V at 1.6A base current and 8A collector current. The transistor is housed in a TO-247-3 package, facilitating through-hole mounting. Typical applications include power supplies, audio amplifiers, and motor control systems across various industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic2V @ 1.6A, 8A
Current - Collector Cutoff (Max)10µA
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 4A, 2V
Frequency - Transition4MHz
Supplier Device PackageTO-247-3
Current - Collector (Ic) (Max)8 A
Voltage - Collector Emitter Breakdown (Max)150 V
Power - Max125 W

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