MJW21191G
TRANS PNP 150V 8A TO247-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MJW21191G is a high-performance PNP bipolar junction transistor (BJT) designed for demanding applications. This device features a collector-emitter breakdown voltage of 150V and a continuous collector current capability of 8A, with a maximum power dissipation of 125W. The MJW21191G offers a transition frequency of 4MHz and a minimum DC current gain (hFE) of 15 at 4A and 2V. Its saturation voltage (Vce Sat) is a maximum of 2V at 1.6A base current and 8A collector current. The transistor is housed in a TO-247-3 package for efficient heat dissipation and is suitable for through-hole mounting. Typical applications include power switching, audio amplifiers, and general-purpose power amplification in industrial and automotive sectors. The collector cutoff current is a maximum of 10µA, and it operates within a temperature range of -65°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 1.6A, 8A |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 4A, 2V |
| Frequency - Transition | 4MHz |
| Supplier Device Package | TO-247-3 |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 125 W |
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