MJW21191
TRANS PNP 150V 8A TO247-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MJW21191 is a high-power NPN Bipolar Junction Transistor (BJT) designed for demanding applications. This PNP device features a 150V collector-emitter breakdown voltage (Vce) and a continuous collector current (Ic) capability of 8A, with a maximum power dissipation of 125W. It offers a minimum DC current gain (hFE) of 15 at 4A and 2V. The transition frequency (fT) is 4MHz. With a low collector cutoff current (Icbo) of 10µA and a Vce(sat) of 2V at 1.6A/8A, it is suitable for power switching and amplification circuits. The MJW21191 is housed in a TO-247-3 package for through-hole mounting, enabling efficient heat dissipation. This component finds application in power supplies, audio amplifiers, and motor control systems. Operating temperature ranges from -65°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 1.6A, 8A |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 4A, 2V |
| Frequency - Transition | 4MHz |
| Supplier Device Package | TO-247-3 |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 125 W |
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