MJL21196
TRANS NPN 250V 16A TO264Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MJL21196 is a high-power NPN bipolar junction transistor (BJT) designed for demanding applications. This component features a 250V collector-emitter breakdown voltage (Vce) and a continuous collector current capability of 16A, with a maximum power dissipation of 200W. It exhibits a minimum DC current gain (hFE) of 25 at 8A and 5V, and a transition frequency of 4MHz. The MJL21196 is housed in a TO-264 package, facilitating through-hole mounting. Key specifications include a collector cutoff current (Ic) of 100µA (max) and a Vce saturation of 4V at 3.2A and 16A. This device is suitable for use in audio amplifiers, power switching circuits, and general-purpose high-power amplification. The operating temperature range is -65°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 3.2A, 16A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 8A, 5V |
| Frequency - Transition | 4MHz |
| Supplier Device Package | TO-264 |
| Current - Collector (Ic) (Max) | 16 A |
| Voltage - Collector Emitter Breakdown (Max) | 250 V |
| Power - Max | 200 W |
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