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MJH16006A

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MJH16006A

TRANS GP BJT NPN 500V 8A

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

Bipolar (BJT) Transistor NPN 500 V 8 A 125 W Through Hole SOT-93 (TO-218)

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-218-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 1A, 5A
Current - Collector Cutoff (Max)150µA
DC Current Gain (hFE) (Min) @ Ic, Vce5 @ 8A, 5V
Frequency - Transition-
Supplier Device PackageSOT-93 (TO-218)
Grade-
Current - Collector (Ic) (Max)8 A
Voltage - Collector Emitter Breakdown (Max)500 V
Power - Max125 W
Qualification-

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