MJF6668G
TRANS PNP DARL 100V 10A TO220FPManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MJF6668G is a PNP Darlington bipolar junction transistor designed for demanding applications. This through-hole component offers a 100V collector-emitter breakdown voltage and a continuous collector current capability of up to 10A, with a maximum saturation voltage of 3V at 100mA and 10A. Featuring a high DC current gain (hFE) of 3000 minimum at 3A and 4V, it excels in power switching and amplification tasks. The TO-220FP package provides robust thermal performance with a maximum power dissipation of 2W. Operating across a wide temperature range of -65°C to 150°C, the MJF6668G is suitable for use in industrial automation, power supplies, and motor control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Darlington |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 100mA, 10A |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 3000 @ 3A, 4V |
| Frequency - Transition | - |
| Supplier Device Package | TO-220FP |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 2 W |
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