MJF6668
TRANS PNP DARL 100V 10A TO220FPManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MJF6668 is a PNP Darlington bipolar junction transistor. This component offers a collector-emitter breakdown voltage of 100 V and a maximum continuous collector current of 10 A. It features a high DC current gain (hFE) of 3000 at 3 A and 4 V. The transistor has a maximum power dissipation of 2 W and a collector cutoff current of 10 µA. Saturation voltage for the MJF6668 is 3 V at 100 mA collector current and 10 A collector current. This device is housed in a TO-220FP package with a through-hole mounting type and operates across a temperature range of -65°C to 150°C. It is commonly utilized in industrial applications such as power switching and control circuits.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Darlington |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 100mA, 10A |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 3000 @ 3A, 4V |
| Frequency - Transition | - |
| Supplier Device Package | TO-220FP |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 2 W |
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