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MJF44H11

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MJF44H11

TRANS NPN 80V 10A TO220FP

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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This onsemi MJF44H11 is a high-performance NPN bipolar junction transistor (BJT) designed for demanding applications. It features a maximum collector current of 10 A and a collector-emitter breakdown voltage of 80 V, making it suitable for power switching and amplification tasks. With a transition frequency of 50 MHz and a DC current gain (hFE) of at least 40 at 4 A and 1 V, this device offers robust performance characteristics. The transistor exhibits a Vce saturation of 1 V at 400 mA and 8 A, and a maximum power dissipation of 2 W. It is housed in a TO-220FP package, facilitating through-hole mounting. The MJF44H11 is commonly employed in industrial automation, power supply units, and general-purpose power control circuits. The operating temperature range is from -55°C to 150°C.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 400mA, 8A
Current - Collector Cutoff (Max)1µA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 4A, 1V
Frequency - Transition50MHz
Supplier Device PackageTO-220FP
Current - Collector (Ic) (Max)10 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max2 W

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