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MJF122

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MJF122

TRANS NPN DARL 100V 5A TO220FP

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi MJF122 is a high-gain NPN Darlington bipolar junction transistor designed for power switching applications. This component offers a collector-emitter breakdown voltage of 100V and a continuous collector current capability of up to 5A. Featuring a minimum DC current gain (hFE) of 2000 at 3A and 3V, the MJF122 is suitable for applications requiring significant current amplification. Its Vce(sat) is rated at a maximum of 3.5V at 20mA collector current and 5A collector current. The transistor is housed in a TO-220FP package, facilitating through-hole mounting. With a maximum power dissipation of 2W and an operating temperature range from -65°C to 150°C, it finds utility in industrial control, power supply regulation, and lighting control systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic3.5V @ 20mA, 5A
Current - Collector Cutoff (Max)10µA
DC Current Gain (hFE) (Min) @ Ic, Vce2000 @ 3A, 3V
Frequency - Transition-
Supplier Device PackageTO-220FP
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)100 V
Power - Max2 W

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