MJE803STU
TRANS NPN DARL 80V 4A TO126-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MJE803STU is an NPN Darlington bipolar junction transistor. This component features a collector-emitter breakdown voltage of 80 V and a continuous collector current rating of 4 A, with a maximum power dissipation of 40 W. Its DC current gain (hFE) is a minimum of 750 at 2 A and 3 V. The device has a collector emitter saturation voltage of 2.8 V at 40 mA collector current and 2 A collector current. Designed for through-hole mounting, it is supplied in a TO-126-3 package (TO-225AA). This transistor is suitable for applications in power switching and amplification, commonly found in consumer electronics and industrial control systems. It is delivered in tube packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2.8V @ 40mA, 2A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 2A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-126-3 |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 40 W |
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