MJE803G
TRANS NPN DARL 80V 4A TO126Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MJE803G is an NPN Darlington bipolar junction transistor. This component is rated for a collector-emitter breakdown voltage of 80V and can handle a continuous collector current of up to 4A. The MJE803G offers a minimum DC current gain (hFE) of 750 at 2A collector current and 3V Vce. The saturation voltage (Vce Sat) is a maximum of 2.8V at 40mA base current and 2A collector current. With a maximum power dissipation of 40W, this transistor is housed in a TO-126 package, also identified as TO-225AA. It operates within an ambient temperature range of -55°C to 150°C. The MJE803G is commonly utilized in power supply circuits, audio amplifiers, and general switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2.8V @ 40mA, 2A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 2A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-126 |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 40 W |
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