MJE803
TRANS NPN DARL 80V 4A TO126Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MJE803 is an NPN Darlington bipolar transistor designed for high-current applications. This component features a 80 V collector-emitter breakdown voltage and a maximum continuous collector current of 4 A. With a significant DC current gain (hFE) of 750 minimum at 2 A and 3 V, it offers substantial amplification. The saturation voltage (Vce Sat) is specified at 2.8 V maximum for 40 mA base current and 2 A collector current. The transistor is housed in a TO-126 (TO-225AA) package, suitable for through-hole mounting. It has a maximum power dissipation of 40 W and an operating temperature range of -55°C to 150°C. This device is commonly utilized in power switching and amplification circuits across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2.8V @ 40mA, 2A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 2A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-126 |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 40 W |
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