MJE802STU
TRANS NPN DARL 80V 4A TO126-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MJE802STU is an NPN Darlington bipolar junction transistor designed for robust power applications. This device offers a collector-emitter breakdown voltage of 80V and a continuous collector current rating of 4A, with a maximum power dissipation of 40W. Featuring a high DC current gain of 750 minimum at 1.5A and 3V, it is suitable for power switching and amplification circuits. The saturation voltage (Vce Sat) is a maximum of 2.5V at 30mA base current and 1.5A collector current. It is packaged in a TO-126-3 (TO-225AA) through-hole configuration and operates within an ambient temperature range up to 150°C. Typical industry applications include power supplies, motor control, and general-purpose power switching.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 30mA, 1.5A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 1.5A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-126-3 |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 40 W |
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