MJE802G
TRANS NPN DARL 80V 4A TO126Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MJE802G is a high-performance NPN Darlington bipolar junction transistor. Rated for a collector-emitter breakdown voltage of 80V and a continuous collector current of up to 4A, this component offers a significant DC current gain (hFE) of 750 minimum at 1.5A and 3V. Dissipating up to 40W, the MJE802G is designed for demanding applications and features a low saturation voltage of 2.5V maximum at 30mA base current and 1.5A collector current. It is housed in a TO-126 package, suitable for through-hole mounting. The operating temperature range is -55°C to 150°C. This transistor finds utility in power switching, motor control, and general amplification circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 30mA, 1.5A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 1.5A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-126 |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 40 W |
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