MJE801STU
TRANS NPN DARL 60V 4A TO126-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MJE801STU NPN Darlington Bipolar Junction Transistor. This device features a 60V collector-emitter breakdown voltage and a maximum collector current of 4A. With a power dissipation of 40W and a minimum DC current gain of 750 at 2A and 3V, it is suitable for applications requiring high current gain and moderate power handling. The saturation voltage at 40mA base current and 2A collector current is 2.8V maximum. The transistor operates at junction temperatures up to 150°C and is supplied in a TO-126-3 (TO-225AA) through-hole package. Its characteristics make it applicable in power switching and amplification circuits within industrial and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2.8V @ 40mA, 2A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 2A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-126-3 |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 40 W |
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