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MJE800STU

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MJE800STU

TRANS NPN DARL 60V 4A TO126-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi MJE800STU is an NPN Darlington bipolar transistor designed for robust power applications. This component offers a collector-emitter breakdown voltage of 60V and a maximum continuous collector current of 4A, with a power dissipation capability of 40W. Featuring a high minimum DC current gain (hFE) of 750 at 1.5A and 3V, it ensures efficient amplification. The transistor exhibits a Vce saturation of 2.5V at 30mA and 1.5A, and a collector cutoff current of 100µA. Packaged in a TO-126-3 (TO-225AA) through-hole configuration, the MJE800STU is suitable for use in power supply units, motor control circuits, and general-purpose amplification tasks across various industrial and consumer electronics sectors. It operates reliably within a junction temperature range of 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 1.5A, 3V
Frequency - Transition-
Supplier Device PackageTO-126-3
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max40 W

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