MJE703STU
TRANS PNP DARL 80V 4A TO126-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MJE703STU is a PNP Darlington bipolar junction transistor designed for high-power amplification and switching applications. This component features a maximum collector current (Ic) of 4 A and a collector-emitter breakdown voltage (Vce) of 80 V. The device exhibits a minimum DC current gain (hFE) of 750 at 2 A collector current and 3 V Vce. The saturation voltage (Vce Sat) is a maximum of 2.8 V at 40 mA base current and 2 A collector current. With a maximum power dissipation of 40 W and an operating junction temperature up to 150°C, the MJE703STU is suitable for use in industrial control, power supplies, and audio amplification systems. It is supplied in a TO-126-3 (TO-225AA) package via tube packaging for through-hole mounting.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Darlington |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2.8V @ 40mA, 2A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 2A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-126-3 |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 40 W |
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