MJE703G
TRANS PNP DARL 80V 4A TO126Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MJE703G is a PNP Darlington bipolar junction transistor designed for power switching applications. This device features a 4A continuous collector current (Ic) capability and a maximum collector-emitter breakdown voltage (Vce) of 80V. With a significant DC current gain (hFE) of 750 minimum at 2A and 3V, it offers high amplification for control circuits. The transistor dissipates a maximum power of 40W and has a collector-emitter saturation voltage (Vce Sat) of 2.8V at 40mA base current and 2A collector current. It is housed in a TO-126 package, facilitating through-hole mounting. The operating temperature range spans from -55°C to 150°C. This component is commonly utilized in industrial power supplies, motor control circuits, and general-purpose power amplification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Darlington |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2.8V @ 40mA, 2A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 2A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-126 |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 40 W |
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