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MJE703

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MJE703

TRANS PNP DARL 80V 4A TO126

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi MJE703 is a PNP Darlington bipolar junction transistor designed for robust power applications. Featuring a collector-emitter breakdown voltage (Vce(max)) of 80V and a continuous collector current (Ic(max)) of 4A, this device is rated for a maximum power dissipation of 40W. The MJE703 exhibits a substantial DC current gain (hFE) of at least 750 at 2A and 3V, characteristic of its Darlington configuration. Its saturation voltage (Vce(sat)) is specified as a maximum of 2.8V at 40mA base current and 2A collector current. This through-hole component is housed in a TO-126 (TO-225AA) package, making it suitable for applications in power supplies, motor control, and audio amplification. The operating temperature range is from -55°C to 150°C.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypePNP - Darlington
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic2.8V @ 40mA, 2A
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 2A, 3V
Frequency - Transition-
Supplier Device PackageTO-126
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max40 W

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