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MJE702STU

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MJE702STU

TRANS PNP DARL 80V 4A TO126-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi MJE702STU is a PNP Darlington bipolar transistor designed for power switching and amplification applications. This through-hole component, housed in a TO-126-3 package, features a maximum collector current (Ic) of 4A and a collector-emitter breakdown voltage (Vce) of 80V. It offers a significant DC current gain (hFE) of 750 minimum at 1.5A collector current and 3V Vce. The device dissipates a maximum power of 40W and has a Vce saturation of 2.5V maximum at 30mA base current and 1.5A collector current. Operating temperature extends up to 150°C (TJ). This transistor is suitable for use in industrial, automotive, and consumer electronics power control circuits.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypePNP - Darlington
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 1.5A, 3V
Frequency - Transition-
Supplier Device PackageTO-126-3
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max40 W

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