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MJE700STU

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MJE700STU

TRANS PNP DARL 60V 4A TO126-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi MJE700STU is a PNP Darlington bipolar junction transistor designed for high current applications. This device features a 60V collector-emitter breakdown voltage and a maximum continuous collector current of 4A, with a power dissipation of 40W. It offers a minimum DC current gain (hFE) of 750 at 1.5A, 3V. The transistor type is PNP - Darlington, with a saturation voltage (Vce Sat) of 2.5V at 30mA, 1.5A. The MJE700STU is packaged in a TO-126-3 (TO-225AA) through-hole mount configuration and operates at junction temperatures up to 150°C. This component is suitable for use in power switching and amplification circuits across various industrial sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypePNP - Darlington
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 1.5A, 3V
Frequency - Transition-
Supplier Device PackageTO-126-3
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max40 W

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