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MJE700G

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MJE700G

TRANS PNP DARL 60V 4A TO126

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi MJE700G is a PNP Darlington bipolar transistor designed for high current applications. This component offers a collector-emitter breakdown voltage of 60V and a continuous collector current capability of up to 4A. Its high DC current gain (hFE) is a minimum of 750 at 1.5A and 3V, facilitating efficient amplification. The transistor features a maximum power dissipation of 40W and a collector-emitter saturation voltage of 2.5V at 30mA base current and 1.5A collector current. With a wide operating temperature range from -55°C to 150°C, it is suitable for demanding environments. The MJE700G is packaged in a TO-126 (TO-225AA) through-hole configuration, commonly used in power supply circuits, audio amplifiers, and general-purpose switching applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypePNP - Darlington
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 1.5A, 3V
Frequency - Transition-
Supplier Device PackageTO-126
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max40 W

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