MJE5852
TRANS PNP 400V 8A TO220Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi's MJE5852 is a high-power PNP bipolar junction transistor (BJT) from the SWITCHMODE™ series, designed for robust switching applications. This device features a 400V collector-emitter breakdown voltage (Vceo) and a maximum continuous collector current (Ic) of 8A, enabling it to handle significant power dissipation up to 80W. The transistor exhibits a minimum DC current gain (hFE) of 5 at 5A collector current and 5V collector-emitter voltage. Its low saturation voltage, specified at 5V (Vce(sat)) with 3A base current driving 8A collector current, ensures efficient power transfer. Packaged in a standard TO-220 through-hole configuration, the MJE5852 is suitable for industrial power supplies, motor control, and general-purpose high-voltage switching applications. It operates across a wide temperature range of -65°C to 150°C.
Additional Information
Series: SWITCHMODE™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 5V @ 3A, 8A |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 5 @ 5A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-220 |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
| Power - Max | 80 W |
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