MJE5851G
TRANS PNP 350V 8A TO220Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MJE5851G is a high-performance PNP Bipolar Junction Transistor (BJT) from the SWITCHMODE™ series. Designed for demanding applications, this through-hole component features a robust 350V collector-emitter breakdown voltage and a maximum collector current of 8A, supporting up to 80W of power dissipation. Its TO-220-3 package facilitates efficient heat management and straightforward board integration. With a minimum DC current gain (hFE) of 5 at 5A and 5V, and a saturation voltage (Vce sat) of 5V at 3A and 8A, the MJE5851G offers reliable performance in power switching and amplification circuits. This device is commonly utilized in industrial power supplies, motor control, and general-purpose power applications.
Additional Information
Series: SWITCHMODE™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 5V @ 3A, 8A |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 5 @ 5A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-220 |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 350 V |
| Power - Max | 80 W |
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