MJE5851
TRANS PNP 350V 8A TO220Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MJE5851, a PNP Bipolar Junction Transistor (BJT) from the SWITCHMODE™ series, offers robust performance for demanding applications. This component features a 350V collector-emitter breakdown voltage and a continuous collector current capability of 8A, with a maximum power dissipation of 80W. The MJE5851 is housed in a standard TO-220 package, facilitating through-hole mounting. Key electrical characteristics include a minimum DC current gain (hFE) of 5 at 5A collector current and 5V collector-emitter voltage, and a saturation voltage (Vce(sat)) of 5V at 3A base current and 8A collector current. This device is suitable for power switching and amplification circuits across various industrial sectors.
Additional Information
Series: SWITCHMODE™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 5V @ 3A, 8A |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 5 @ 5A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-220 |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 350 V |
| Power - Max | 80 W |
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