MJE5850G
TRANS PNP 300V 8A TO220Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MJE5850G is a high-power PNP bipolar junction transistor from the SWITCHMODE™ series. This device offers a maximum collector-emitter breakdown voltage of 300 V and a continuous collector current capability of 8 A, with a maximum power dissipation of 80 W. It features a minimum DC current gain (hFE) of 5 at 5 A collector current and 5 V collector-emitter voltage. The saturation voltage (Vce Sat) is specified at a maximum of 5 V for a base current of 3 A and a collector current of 8 A. Designed for through-hole mounting, the MJE5850G is supplied in a standard TO-220-3 package. This transistor is commonly utilized in power supply circuits, audio amplifiers, and general-purpose switching applications within industrial and consumer electronics.
Additional Information
Series: SWITCHMODE™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 5V @ 3A, 8A |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 5 @ 5A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-220 |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 80 W |
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