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MJE5742

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MJE5742

TRANS NPN DARL 400V 8A TO220

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi MJE5742 is an NPN Darlington bipolar junction transistor (BJT) designed for high-voltage, high-current applications. This device features a maximum collector-emitter breakdown voltage of 400V and a continuous collector current capability of 8A. With a minimum DC current gain of 200 at 2A and 5V, and a Vce saturation of 3V at 400mA and 8A, it offers robust switching and amplification characteristics. The MJE5742 is housed in a TO-220-3 package, facilitating through-hole mounting and dissipating up to 2W. Its operational temperature range spans from -65°C to 150°C. This component is commonly utilized in power supply circuits, motor control, and general-purpose amplification across industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic3V @ 400mA, 8A
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2A, 5V
Frequency - Transition-
Supplier Device PackageTO-220
Current - Collector (Ic) (Max)8 A
Voltage - Collector Emitter Breakdown (Max)400 V
Power - Max2 W

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