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MJE5731A

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MJE5731A

TRANS PNP 375V 1A TO220

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi MJE5731A is a high-voltage PNP bipolar junction transistor (BJT) designed for robust power switching applications. This through-hole component, housed in a TO-220 package, offers a maximum collector-emitter breakdown voltage (Vce) of 375V and a continuous collector current (Ic) capability of 1A. With a power dissipation of 40W and a transition frequency of 10MHz, it is suitable for use in power supply circuits, audio amplifiers, and general-purpose switching. The MJE5731A exhibits a minimum DC current gain (hFE) of 30 at 300mA and 10V. Its saturation voltage (Vce Sat) is rated at a maximum of 1V at 200mA and 1A, ensuring efficient operation. Operating temperature ranges from -65°C to 150°C.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 200mA, 1A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 300mA, 10V
Frequency - Transition10MHz
Supplier Device PackageTO-220
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)375 V
Power - Max40 W

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