MJE5731
TRANS PNP 350V 1A TO220Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MJE5731 is a PNP bipolar junction transistor designed for high-voltage applications. This through-hole component, housed in a TO-220-3 package, offers a maximum collector-emitter breakdown voltage of 350 V and a continuous collector current of 1 A. It features a maximum power dissipation of 40 W and a transition frequency of 10 MHz. The device exhibits a minimum DC current gain (hFE) of 30 at 300 mA collector current and 10 V collector-emitter voltage. The saturation voltage (Vce Saturation) is a maximum of 1 V at 200 mA base current and 1 A collector current. The MJE5731 is suitable for use in power supply circuits, switching applications, and general-purpose amplification across various industrial sectors. It operates within an extended temperature range of -65°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 200mA, 1A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 300mA, 10V |
| Frequency - Transition | 10MHz |
| Supplier Device Package | TO-220 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 350 V |
| Power - Max | 40 W |
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