MJE5730
TRANS PNP 300V 1A TO220Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MJE5730 is a PNP Bipolar Junction Transistor (BJT) designed for demanding applications. This component features a 300V collector-emitter breakdown voltage and a continuous collector current rating of 1A, with a saturation voltage of 1V at 200mA/1A. Its transition frequency is 10MHz, and it offers a minimum DC current gain (hFE) of 30 at 300mA and 10V. With a maximum power dissipation of 40W, the MJE5730 is suitable for power switching and amplification circuits. The device is housed in a TO-220-3 package, facilitating through-hole mounting. It operates within a temperature range of -65°C to 150°C. This transistor finds application in power supplies, motor control, and general-purpose amplification across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 200mA, 1A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 300mA, 10V |
| Frequency - Transition | 10MHz |
| Supplier Device Package | TO-220 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 40 W |
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