MJE521G
TRANS NPN 40V 4A TO126Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MJE521G is a high-performance NPN bipolar junction transistor (BJT) designed for robust power applications. This through-hole component, housed in a TO-126 package (TO-225AA), offers a collector-emitter breakdown voltage of 40V and a maximum collector current of 4A. With a power dissipation capability of 40W, it is suitable for demanding switching and amplification circuits. The MJE521G exhibits a minimum DC current gain (hFE) of 40 at 1A collector current and 1V collector-emitter voltage, ensuring efficient operation. Its operating temperature range of -65°C to 150°C (TJ) makes it reliable in various industrial environments, including power supplies, motor control, and general-purpose amplification. The transistor's low collector cutoff current of 100µA (ICBO) contributes to reduced standby power consumption.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 1A, 1V |
| Frequency - Transition | - |
| Supplier Device Package | TO-126 |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 40 W |
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