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MJE4353G

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MJE4353G

TRANS PNP 160V 16A SOT93

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi MJE4353G, a PNP bipolar junction transistor, offers robust performance with a maximum collector-emitter voltage (Vce) of 160V and a continuous collector current (Ic) of 16A. This device is rated for a maximum power dissipation of 125W. Key specifications include a minimum DC current gain (hFE) of 15 at 8A and 2V, and a transition frequency of 1MHz. Vce(sat) is specified at a maximum of 3.5V for an Ic of 16A and an Ib of 2A. The transistor operates within an ambient temperature range of -65°C to 150°C. Packaged in a SOT-93 (TO-218-3) through-hole configuration, the MJE4353G is suitable for applications in industrial power control and audio amplification.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-218-3
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic3.5V @ 2A, 16A
Current - Collector Cutoff (Max)750µA
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 8A, 2V
Frequency - Transition1MHz
Supplier Device PackageSOT-93
Current - Collector (Ic) (Max)16 A
Voltage - Collector Emitter Breakdown (Max)160 V
Power - Max125 W

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